Suppression of dark current in GeO_x-passivated germanium metal-semiconductor-metal photodetector by plasma post-oxidation-Reference-Cited by-同舟云学术

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Suppression of dark current in GeO_x-passivated germanium metal-semiconductor-metal photodetector by plasma post-oxidation

Published:2015-06-19 Issue:13 Volume:23 Page:16967
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Kang Jian,Zhang Rui,Takenaka Mitsuru,Takagi Shinichi

Funder

Ministry of Education, Culture, Sports, Science, and Technology (MEXT)

New Energy and Industrial Technology Development Organisation (NEDO)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference26 articles.

1. Monolithic Silicon Microphotonics

2. High performance, waveguide integrated Ge photodetectors

3. Ge-Photodetectors for Si-Based Optoelectronic Integration

4. High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide

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1. High-performance Ge photodetectors on silicon photonics platform for optical interconnect;Sensors and Actuators A: Physical;2024-10

2. Electrical, structural, morphological and photovoltaic properties of Au/n-Ge heterojunctions using V2O5 interfacial layer;Journal of Materials Science: Materials in Electronics;2024-07

3. 8F² Ternary Content Addressable Memory Array Utilizing Interface Passivated Ge Memory-Diodes With 2 × 10⁵ Self-Rectifying Ratio;IEEE Electron Device Letters;2024-05

4. Boosting the responsivity of amorphous-Ga2O3 solar-blind photodetector via organosilicon surface passivation;Applied Physics Letters;2024-02-19

5. Low dark current lateral Ge PIN photodetector array with resonant cavity effect for short wave infrared imaging;Journal of Physics D: Applied Physics;2024-01-30

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