InGaN/GaN light-emitting diode having direct hole injection plugs and its high-current operation-Reference-Cited by-同舟云学术

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InGaN/GaN light-emitting diode having direct hole injection plugs and its high-current operation

Published:2017-03-13 Issue:6 Volume:25 Page:6440
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Kim Sungjoon,Cho Seongjae,Jeong Jaedeok,Kim Sungjun,Hwang Sungmin,Kim Garam,Yoon Sukho,Park Byung-Gook

Funder

Ministry of Science, ICT and Future Planning (MSIP)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference36 articles.

1. Performance of high-power III-nitride light emitting diodes

2. Prospects for LED lighting

3. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

4. Efficiency droop in nitride-based light-emitting diodes

5. Efficiency droop in light-emitting diodes: Challenges and countermeasures

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical Characterization of Gan-Based Led Devices Through Spectroscopic Ellipsometry;2024

2. Multi-colour GaN-based LEDs with trench structure;Japanese Journal of Applied Physics;2022-05-01

3. Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer;Nanomaterials;2021-11-20

4. Hole Transport in Ultraviolet Light-Emitting Diode via p-Type Injection Channel;IEEE Transactions on Electron Devices;2021-05

5. A promising approach for in-situ growth of phosphor-free white InGaN/GaN multiple quantum wells with V-pits;Journal of Luminescence;2020-11

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