Low irradiance background limited type-II superlattice MWIR M-barrier imager
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference8 articles.
1. Modeling of type-II InAs/GaSb superlattices using an empirical tight-binding method and interface engineering
2. The importance of band alignment in VLWIR type-II InAs/GaSb heterodiodes containing the M-structure barrier
3. Graded band gap for dark-current suppression in long-wave infrared W-structured type-II superlattice photodiodes
4. Background limited long wavelength infrared type-II InAs/GaSb superlattice photodiodes operating at 110 K
5. Background limited performance of long wavelength infrared focal plane arrays fabricated from M-structure InAs/GaSb superlattices
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2. High operating temperature InAsSb-based mid-infrared focal plane array with a band-aligned compound barrier;Applied Physics Letters;2020-01-21
3. InAs/GaSb type II superlattices: A developing material system for third generation of IR imaging;Mid-infrared Optoelectronics;2020
4. High quantum efficiency long-/long-wave dual-color type-II InAs/GaSb infrared detector;Chinese Physics B;2019-03
5. Mid-/long-wave dual-band infrared focal plane array based on type-II InAs/GaSb superlattice;Infrared, Millimeter-Wave, and Terahertz Technologies V;2018-11-14
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