The importance of band alignment in VLWIR type-II InAs/GaSb heterodiodes containing the M-structure barrier
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Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Performance of LWIR to VLWIR barrier photodetectors based on M-structure superlattices;Optics Express;2024-01-12
2. Sb-based third generation at Center for Quantum Devices;Infrared Technology and Applications XLVI;2020-04-23
3. Advances in antimonide-based Type-II superlattices for infrared detection and imaging at center for quantum devices;Infrared Physics & Technology;2013-07
4. Low irradiance background limited type-II superlattice MWIR M-barrier imager;Optics Letters;2012-05-30
5. Effect of strain on the growth of InAs/GaSb superlattices: An x-ray diffraction study;Journal of Applied Physics;2010-06-15
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