Junction-less phototransistor with nanowire channels, a modeling study
Author:
Funder
Directorate for Engineering (ENG)
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference18 articles.
1. Strain induced change of bandgap and effective mass in silicon nanowires
2. Silicon nanowire detectors showing phototransistive gain
3. Semiconductor nanowires: optics and optoelectronics
4. Active Pixel Sensor Using a 1×16 Nano-Wire Photodetector Array for Complementary Metal Oxide Semiconductor Imagers
5. A Low-Power Silicon-on-Insulator Photodetector with a Nanometer-Scale Wire for Highly Integrated Circuit
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1. Past, present, and future of hybrid plasmonic waveguides for photonics integrated circuits;Nanotechnology and Precision Engineering;2024-08-16
2. Mid‐Infrared Top‐Gated Ge0.82Sn0.18 Nanowire Phototransistors;Advanced Optical Materials;2024-05-11
3. Diameter-dependent photoresponse with high internal gain in a back gated single Si nanowire phototransistor;Journal of Physics D: Applied Physics;2019-08-02
4. High sensitivity silicon single nanowire junctionless phototransistor;Applied Physics Letters;2016-02-08
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