Diameter-dependent photoresponse with high internal gain in a back gated single Si nanowire phototransistor-Reference-Cited by-同舟云学术

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Diameter-dependent photoresponse with high internal gain in a back gated single Si nanowire phototransistor

Published:2019-08-02 Issue:42 Volume:52 Page:425103
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Dhyani Veerendra,Jakhar Alka,Wellington J John,Das Samaresh^ORCID

Funder

IMPacting Research Innovation and Technology (IMPRINT), India

Ministry of Electronics and Information Technology (MEITY), India,

Science and Engineering Research Board

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://iopscience.iop.org/article/10.1088/1361-6463/ab313c/pdf

Reference34 articles.

1. Nanowire photonics

2. Nanowire Photodetectors

3. Recent developments in photonic, plasmonic and hybrid nanowire waveguides

4. Ultraviolet Detectors Based on Wide Bandgap Semiconductor Nanowire: A Review

5. Diameter-Dependent Internal Gain in Ohmic Ge Nanowire Photodetectors

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4. Spectrally Tunable Broadband Gate-All-Around InAsP/InP Quantum Discs-in-Nanowire Array Phototransistors with a High Gain-Bandwidth Product;ACS Photonics;2023-05-23

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