13 μm InAs/GaAs quantum dot DFB laser integrated on a Si waveguide circuit by means of adhesive die-to-wafer bonding-Reference-Cited by-同舟云学术

13 μm InAs/GaAs quantum dot DFB laser integrated on a Si waveguide circuit by means of adhesive die-to-wafer bonding

Published:2018-07-02 Issue:14 Volume:26 Page:18302
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Uvin Sarah,Kumari Sulakshna,De Groote Andreas,Verstuyft Steven,Lepage Guy,Verheyen Peter,Van Campenhout Joris,Morthier Geert,Van Thourhout Dries^ORCID,Roelkens Gunther

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference19 articles.

1. Rationale and challenges for optical interconnects to electronic chips

2. On-chip light sources for silicon photonics

3. Handling the heat

4. High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents

5. Highly Reliable Low-Threshold InAs Quantum Dot Lasers on On-Axis (001) Si with 87% Injection Efficiency

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