Highly Reliable Low-Threshold InAs Quantum Dot Lasers on On-Axis (001) Si with 87% Injection Efficiency-Reference-Cited by-同舟云学术

Highly Reliable Low-Threshold InAs Quantum Dot Lasers on On-Axis (001) Si with 87% Injection Efficiency

Published:2017-12-18 Issue:3 Volume:5 Page:1094-1100
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Jung Daehwan¹^ORCID,Zhang Zeyu²,Norman Justin³,Herrick Robert⁴,Kennedy M. J.²,Patel Pari²,Turnlund Katherine¹,Jan Catherine⁴,Wan Yating²,Gossard Arthur C.¹²³,Bowers John E.¹²³

Affiliation:

1. Institute for Energy Efficiency, University of California Santa Barbara, Santa Barbara, California 93106, United States

2. Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93106, United States

3. Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, United States

4. Intel Corporation, Santa Clara, California 95054, United States

Funder

Intel Corporation

Advanced Research Projects Agency - Energy

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.7b01387

Reference24 articles.

1. Roadmap on silicon photonics

2. High performance continuous wave 1.3 μm quantum dot lasers on silicon

3. Electrically pumped continuous-wave III–V quantum dot lasers on silicon

4. 13 μm submilliamp threshold quantum dot micro-lasers on Si

5. Antiphase domains in GaAs grown by metalorganic chemical vapor deposition on silicon‐on‐insulator

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