395 nm GaN-based near-ultraviolet light-emitting diodes on Si substrates with a high wall-plug efficiency of 520%@350 mA

Author:

Li Yuan,Lan Jianyu,Wang Wenliang,Zheng Yulin,Xie Wentong,Tang Xin,Kong Deqi,Xia Yu,Lan Zhibin,Li Runze,He Xiaobin,Li Guoqiang

Funder

China Postdoctoral Science Foundation

National Defense Scientific and Technological Innovation Special Zone

National Natural Science Foundation Major Instrument Special Project of China

National Natural Science Foundation of China

National Science Fund for Excellent Young Scholars of China

Natural Science Foundation for Doctor Scientific Research Start of Guangdong Province

Source fund of the State Key Laboratory of Space Technology of China

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

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