Integrating GeSn photodiode on a 200 mm Ge-on-insulator photonics platform with Ge CMOS devices for advanced OEIC operating at 2 μm band-Reference-Cited by-同舟云学术

Integrating GeSn photodiode on a 200 mm Ge-on-insulator photonics platform with Ge CMOS devices for advanced OEIC operating at 2 μm band

Published:2019-09-11 Issue:19 Volume:27 Page:26924
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Xu Shengqiang,Han Kaizhen,Huang Yi-Chiau,Lee Kwang Hong^ORCID,Kang Yuye,Masudy-Panah Saeid,Wu Ying,Lei Dian,Zhao Yunshan,Wang Hong,Tan Chuan Seng,Gong Xiao,Yeo Yee-Chia

Funder

Ministry of Education - Singapore (MOE)

National University of Singapore (NUS)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference49 articles.

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5. Electrically pumped hybrid AlGaInAs-silicon evanescent laser

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