A 300mm CMOS-compatible PECVD silicon nitride platform for integrated photonics with low loss and low process induced phase variation-Reference-Cited by-同舟云学术

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A 300mm CMOS-compatible PECVD silicon nitride platform for integrated photonics with low loss and low process induced phase variation

Published:2019 Issue: Volume: Page:
ISSN:
Container-title:Optical Fiber Communication Conference (OFC) 2019
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Author:

Saseendran Sandeep S.,Kongnyuy Tangla D.,Figeys Bruno,Buja Federico,Troia Benedetto,Kerman Sarp,Marinins Aleksandrs,Jansen Roelof,Rottenberg Xavier,Tezcan Deniz S.,Soussan Philippe

Publisher

OSA

Reference5 articles.

1. Silicon Nitride Photonic Integration Platforms for Visible, Near-Infrared and Mid-Infrared Applications

2. Phase coherence length in silicon photonic platform

3. Impact of ALD grown passivation layers on silicon nitride based integrated optic devices for very-near-infrared wavelengths

4. Mitigation of UV-Induced Propagation Loss in PECVD Silicon Nitride Photonic Waveguides

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Material Characterisation of LPCVD SiN and Understanding Loss Behavior;2023 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC);2023-06-26

2. MoO_x: A transparent phase change material for integrated photonics applications?;2022 IEEE Photonics Conference (IPC);2022-11

3. Silicon-Family Materials and Waveguides;Passive Silicon Photonic Devices;2022-03-09

4. MEMS-above CMOS and novel optical MEMS sensor concepts;Handbook of Silicon Based MEMS Materials and Technologies;2020

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