Optical investigation of band-edge structure and built-in electric field of AlGaN/GaN heterostructures by means of thermoreflectance, photoluminescence, and contactless electroreflectance spectroscopy
Author:
Funder
National Science Council of Taiwan (NSCT)
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference11 articles.
1. An insulator-lined silicon substrate-via technology with high aspect ratio
2. Stimulated emission and ultrafast carrier relaxation in AlGaN/GaN multiple quantum wells
3. Determination of the carrier-type at III-nitride semiconductor surfaces/interfaces using contactless electroreflectance
4. Contactless electroreflectance and photoreflectance studies of n- and p-type-doped GaN with Ga and N face
5. Modulation spectroscopic investigation on lattice polarity of gallium nitride
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