Tensile-strained Ge/SiGe quantum-well photodetectors on silicon substrates with extended infrared response
Author:
Funder
Ministry of Science and Technology, Taiwan (MOST)
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference33 articles.
1. Material Properties of Si-Ge/Ge Quantum Wells
2. Towards low energy consumption integrated photonic circuits based on Ge/SiGe quantum wells
3. Strong quantum-confined Stark effect in germanium quantum-well structures on silicon
4. Quantum-Confined Stark Effect in Ge/SiGe Quantum Wells on Si for Optical Modulators
5. Theory for n-type doped, tensile-strained Ge–Si_xGe_ySn_1−x−y quantum-well lasers at telecom wavelength
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