Very high external quantum efficiency and wall-plug efficiency 527 nm InGaN green LEDs by MOCVD-Reference-Cited by-同舟云学术

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Very high external quantum efficiency and wall-plug efficiency 527 nm InGaN green LEDs by MOCVD

Published:2018-12-04 Issue:25 Volume:26 Page:33108
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Li P. P.,Zhao Y. B.,Li H. J.,Che J. M.,Zhang Z.-H.^ORCID,Li Z. C.,Zhang Y. Y.,Wang L. C.,Liang M.,Yi X. Y.,Wang G. H.

Funder

Beijing Municipal Science and Technology Project

Guangzhou Municipal Science and Technology Project

National Key R&D Program of China

Natural Science Foundation of Jiangsu Province

National Natural Science Foundation of China

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference28 articles.

1. White light emitting diodes with super-high luminous efficacy

2. Green Semipolar (202̄1̄) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth

3. Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells

4. Carrier localization and nonradiative recombination in yellow emitting InGaN quantum wells

5. Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes

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4. A Review of Light-Emitting Diodes and Ultraviolet Light-Emitting Diodes and Their Applications;Photonics;2024-05-22

5. High‐Performance and Temperature‐Stable InGaN Single‐Quantum‐Well Red Light‐Emitting Diodes via Selective Hydrogen Passivation;physica status solidi (a);2024-04-21

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