Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes
Author:
Affiliation:
1. Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Funder
National High Technology of China
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4906960
Reference27 articles.
1. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
2. Solid-State Light Sources Getting Smart
3. Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer
4. White light emitting diodes with super-high luminous efficacy
5. Quantum Efficiency Enhancement of 530 nm InGaN Green Light-Emitting Diodes with Shallow Quantum Well
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