Theoretical analysis of electro-refractive index variation in asymmetric Ge/SiGe coupled quantum wells
Author:
Funder
National Natural Science Foundation of China (NSFC)
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference24 articles.
1. Strong quantum-confined Stark effect in germanium quantum-well structures on silicon
2. 23 GHz Ge/SiGe multiple quantum well electro-absorption modulator
3. Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown on silicon
4. Integrated germanium optical interconnects on silicon substrates
5. Ge/SiGe quantum confined Stark effect electro-absorption modulation with low voltage swing at λ = 1550 nm
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1. 应用于锗硅材料的高效耦合光栅研究;Laser & Optoelectronics Progress;2022
2. Ge/SiGe多量子阱调制器的研究进展;Laser & Optoelectronics Progress;2022
3. Background impurities in a delta-doped QW. Part II: Edge doping;Semiconductor Science and Technology;2021-03-04
4. Uniaxially tensile strained Ge/SiGe coupled quantum wells;2020 International Conference on Optoelectronic Materials and Devices;2021-01-26
5. Recent Progress on Ge/SiGe Quantum Well Optical Modulators, Detectors, and Emitters for Optical Interconnects;Photonics;2019-03-01
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