Effects of growth pressure on erbium doped GaN infrared emitters synthesized by metal organic chemical vapor deposition
Author:
Publisher
The Optical Society
Subject
Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Green emission from Er-doped GaN grown by molecular beam epitaxy on Si substrates
2. Green electroluminescence from Er-doped GaN Schottky barrier diodes
3. Modeling of gain in erbium-doped fiber amplifiers
4. Room-temperature electroluminescence properties of Er,O-codoped GaAs injection-type light-emitting diodes grown by organometallic vapor phase epitaxy
5. Hot electron impact excitation cross-section of Er3+ and electroluminescence from erbium-implanted silicon metal-oxide-semiconductor tunnel diodes
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3. Single-mode channel waveguide at 1540 nm in Er-doped ZnO thin film;Journal of Luminescence;2017-12
4. Shortwave infrared (SWIR) emission from 450 nm InGaN diode lasers;Optical Materials Express;2016-05-27
5. MOCVD growth of Er-doped III-N and optical-magnetic characterization;Rare Earth and Transition Metal Doping of Semiconductor Materials;2016
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