Shortwave infrared (SWIR) emission from 450 nm InGaN diode lasers-Reference-Cited by-同舟云学术

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Shortwave infrared (SWIR) emission from 450 nm InGaN diode lasers

Published:2016-05-27 Issue:6 Volume:6 Page:2139
ISSN:2159-3930
Container-title:Optical Materials Express
language:en
Short-container-title:Opt. Mater. Express

Author:

Kernke Robert,Hempel Martin,Tomm Jens W.,Elsaesser Thomas,Stojetz Bernhard,König Harald,Strauß Uwe

Funder

Bundesministerium für Bildung und Forschung (BMBF)

Publisher

The Optical Society

Subject

Electronic, Optical and Magnetic Materials

Reference26 articles.

1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

2. High-power 2.8 W blue-violet laser diode for white light sources

3. Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202¯1¯) GaN substrates

4. Development of AlInGaN based blue-violet lasers on GaN and SiC substrates

5. High-power laser structures grown on bulk GaN crystals

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Rapid degradation of InGaN/GaN green laser diodes;Superlattices and Microstructures;2020-06

2. Infrared emission bands and thermal effects for 440-nm-emitting GaN-based laser diodes;AIP Advances;2020-05-01

3. Origin of yellow emissions from (In,Ga,Al)N based 450 nm emitting diode lasers;OSA Continuum;2019-04-01

4. Visible and near-infrared emission images of (In,Ga,Al)N-based 450nm emitting-diode lasers;Novel In-Plane Semiconductor Lasers XVIII;2019-03-01

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