Infrared emission bands and thermal effects for 440-nm-emitting GaN-based laser diodes-Reference-Cited by-同舟云学术

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Infrared emission bands and thermal effects for 440-nm-emitting GaN-based laser diodes

Published:2020-05-01 Issue:5 Volume:10 Page:055311
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Mao Feng¹,Hong Jin¹,Wang Han¹^ORCID,Chen Ye¹,Jing Chengbin¹,Yang Pingxiong¹,Tomm Jens W.²^ORCID,Chu Junhao¹³,Yue Fangyu¹^ORCID

Affiliation:

1. Key Laboratory of Polar Materials and Devices, East China Normal University, 200241 Shanghai, People’s Republic of China

2. Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Str. 2A, 12489 Berlin, Germany

3. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Shanghai 200083, People’s Republic of China

Funder

National Natural Science Foundation of China

Aerostatic Science Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5143802

Reference17 articles.

1. Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz

2. Cathodoluminescence as an effective probe of carrier transport and deep level defects in droop-mitigating InGaN/GaN quantum well heterostructures

3. Direct measurement of facet temperature up to melting point and cod in high-power 980-nm semiconductor diode lasers

4. Deep level associated with the slow degradation of GaAlAs DH laser diodes

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1. Modification of interface properties of Au/n-GaN Schottky junction by rare-earth oxide Nd2O3 as an interlayer and its microstructural characterization;Vacuum;2023-09

2. Thin films ZnO-QDs Synthesis applying simultaneously the techniques of colloidal synthesis and sol gel and phenomenon at Zn2+→Zn3+ + e- charge transfer, applied to Shottky diode.;2023-05-30

3. Effect of Temperature on the Electrical and Current Transport Properties of Au/Nd2O3/n-GaN Metal/Interlayer/Semiconductor (MIS) Junction;Applied Physics A;2021-01-28

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