Temperature and doping concentration dependence of the energy band gap in β-Ga_2O_3 thin films grown on sapphire
Author:
Funder
National Science Foundation (NSF)
Publisher
The Optical Society
Subject
Electronic, Optical and Magnetic Materials
Reference45 articles.
1. Self-Catalytic Growth of β-Ga2O3Nanostructures by Chemical Vapor Deposition
2. Epitaxial growth of α-Ga2O3 thin films on a-, m-, and r-plane sapphire substrates by mist chemical vapor deposition using α-Fe2O3 buffer layers
3. High pulsed current densityβ-Ga2O3MOSFETs verified by an analytical model corrected for interface charge
4. Enhancement-mode Ga2O3 MOSFETs with Si-ion-implanted source and drain
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