Enhancement-mode Ga2O3 MOSFETs with Si-ion-implanted source and drain
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/10/i=4/a=041101/pdf
Reference17 articles.
1. Recent progress in Ga2O3power devices
2. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
3. Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics
4. Depletion-mode Ga2O3 MOSFETs on β-Ga2O3 (010) substrates with Si-ion-implanted channel and contacts
5. Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V
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