Wafer-scale surface roughening for enhanced light extraction of high power AlGaInP-based light-emitting diodes-Reference-Cited by-同舟云学术

Wafer-scale surface roughening for enhanced light extraction of high power AlGaInP-based light-emitting diodes

Published:2014-03-31 Issue:S3 Volume:22 Page:A723
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Park Hyeong-Ho,Zhang Xin,Cho Yunae,Kim Dong-Wook,Kim Joondong,Lee Keun Woo,Choi Jehyuk,Lee Hee Kwan,Jung Sang Hyun,Her Eun Jin,Kim Chang Hwan,Moon A-Young,Shin Chan-Soo,Shin Hyun-Beom,Sung Ho Kun,Park Kyung Ho,Park Hyung-Ho,Kim Hi-Jung,Kang Ho Kwan

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference34 articles.

1. Stretchable, Transparent Graphene Interconnects for Arrays of Microscale Inorganic Light Emitting Diodes on Rubber Substrates

2. Observation of two-photon emission from semiconductors

3. High-efficiency AlGaInP light-emitting diodes for solid-state lighting applications

4. Ultrahigh spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructures

5. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening

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