Improvement of light extraction efficiency in AlGaInP-based vertical miniaturized-light-emitting diodes via surface texturing

Author:

Cui Siyuan,Shi Lang,Jin Leonard1,Zhou Qianxi,Sun Yuechang,Jin Conglong2,Hu Jiahui2,Wen Kuosheng2,Xu Zhou2,Zhou ShengjunORCID

Affiliation:

1. University of Waterloo

2. Jiangxi SMTC Semiconductor Co., Ltd.

Abstract

AlGaInP-based light-emitting diodes (LEDs) suffer from a low external quantum efficiency (EQE), which is mainly restrained by the poor light extraction efficiency. Here, we demonstrate AlGaInP-based vertical miniaturized-LEDs (mini-LEDs) with a porous n-AlGaInP surface using a wet etching process to boost light extraction. We investigated the effects of etching time on the surface morphology of the porous n-AlGaInP surface. We found that as the etching time is prolonged, the density of pores increases initially and decreases subsequently. In comparison with the vertical mini-LED with a smooth n-AlGaInP surface, the vertical mini-LEDs with the porous n-AlGaInP surface reveal improvement in light output power and EQE, meanwhile, without the deterioration of electrical performance. The highest improvement of 38.9% in EQE measured at 20 mA is observed from the vertical mini-LED with the maximum density of the pores. Utilizing a three-dimensional finite-difference time-domain method, we reveal the underlying mechanisms of improved performance, which are associated with suppressed total internal reflection and efficient light scattering effect of the pores.

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

National Youth Talent Support Program

Fundamental Research Funds for the Central Universities

Publisher

Optica Publishing Group

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