Independent variations of applied voltage and injection current for controlling the quantum-confined Stark effect in an InGaN/GaN quantum-well light-emitting diode-Reference-Cited by-同舟云学术

Independent variations of applied voltage and injection current for controlling the quantum-confined Stark effect in an InGaN/GaN quantum-well light-emitting diode

Published:2014-04-01 Issue:7 Volume:22 Page:8367
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Chen Horng-Shyang,Liu Zhan Hui,Shih Pei-Ying,Su Chia-Ying,Chen Chih-Yen,Lin Chun-Han,Yao Yu-Feng,Kiang Yean-Woei,Yang C. C.

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference15 articles.

1. Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures

2. Determination of photoluminescence mechanism in InGaN quantum wells

3. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

4. Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect

5. Reduced injection current induced blueshift in an InGaN∕GaN quantum-well light-emitting diode of prestrained growth

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