Affiliation:
1. University of Virginia
2. Phase Sensitive Innovations
Abstract
We report InGaAs/InP based p-i-n photodiodes with an external quantum efficiency (EQE) above 98% from 1510 nm to 1575 nm. For surface normal photodiodes with a diameter of 80 µm, the measured 3-dB bandwidth is 3 GHz. The saturation current is 30.5 mA, with an RF output power of 9.3 dBm at a bias of −17 V at 3 GHz.
Funder
National Science Foundation
Subject
Atomic and Molecular Physics, and Optics
Cited by
7 articles.
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