Bandgap-customizable germanium using lithographically determined biaxial tensile strain for silicon-compatible optoelectronics-Reference-Cited by-同舟云学术

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Bandgap-customizable germanium using lithographically determined biaxial tensile strain for silicon-compatible optoelectronics

Published:2015-06-17 Issue:13 Volume:23 Page:16740
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Sukhdeo David S.,Nam Donguk,Kang Ju-Hyung,Brongersma Mark L.,Saraswat Krishna C.

Funder

Office of Naval Research

APIC Corporation

Stanford Graduate Fellowship

INHA UNIVERSITY Research

Pioneer Research Center Program

National Research Foundation of Korea

Ministry of Science, ICT & Future Planning

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference31 articles.

1. Rationale and challenges for optical interconnects to electronic chips

2. Mid-infrared photonics in silicon and germanium

3. Recent advances in germanium emission [Invited]

4. Theoretical Analysis of GeSn Alloys as a Gain Medium for a Si-Compatible Laser

5. Effects of hydrogen annealing on heteroepitaxial-Ge layers on Si: Surface roughness and electrical quality

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1. Evolution of GeSi islands in epitaxial Ge-on-Si during annealing;Applied Surface Science;2024-06

2. Modeling of the Bandgap Distribution in Bi-Axially Strained Germanium Crossbeam for Laser Applications;IEEE Photonics Journal;2022-02

3. Suspended germanium membranes photodetector with tunable biaxial tensile strain and location-determined wavelength-selective photoresponsivity;Applied Physics Letters;2021-11-08

4. Strain-relaxed GeSn-on-insulator (GeSnOI) microdisks;Optics Express;2021-08-24

5. Biaxially strained germanium crossbeam with a high-quality optical cavity for on-chip laser applications;Optics Express;2021-04-26

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