Enhancement of optical polarization degree of AlGaN quantum wells by using staggered structure-Reference-Cited by-同舟云学术

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Enhancement of optical polarization degree of AlGaN quantum wells by using staggered structure

Published:2016-07-29 Issue:16 Volume:24 Page:18176
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Wang Weiying,Lu Huimin,Fu Lei,He Chenguang,Wang Mingxing,Tang Ning,Xu Fujun,Yu Tongjun,Ge Weikun,Shen Bo

Funder

Beijing Higher Education Young Elite Teacher Project

national basic reasearch program of china

National High-Tech Research and Development Program of China

National Natural Science Foundation of China (NSFC)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference23 articles.

1. Application of GaN-based ultraviolet-C light emitting diodes – UV LEDs – for water disinfection

2. Survey of ultraviolet non-line-of-sight communications

3. Advances in group III-nitride-based deep UV light-emitting diode technology

4. 231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire

5. Strain-driven light-polarization switching in deep ultraviolet nitride emitters

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1. Insights into optical absorption and dark currents of the 6.1 Å type-II superlattice absorbers for MWIR and SWIR applications;Journal of Applied Physics;2024-08-01

2. The composited high reflectivity p-type electrodes with patterned ITO for AlGaN-based ultraviolet light emitting diodes;Applied Physics Letters;2024-07-01

3. Progress in Performance of AlGaN‐Based Ultraviolet Light Emitting Diodes;Advanced Electronic Materials;2024-03-09

4. Influence of the thickness of p-GaN ohmic contact layer on the performance of AlGaN-based deep-ultraviolet light-emitting diodes;Materials Science in Semiconductor Processing;2024-02

5. Improvement in quantum efficiency of green GaN-based micro-LED by trapezoidal quantum well;Journal of Luminescence;2023-11

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