Three-dimensional metal–semiconductor–metal AlN deep-ultraviolet detector-Reference-Cited by-同舟云学术

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Three-dimensional metal–semiconductor–metal AlN deep-ultraviolet detector

Published:2020-06-12 Issue:12 Volume:45 Page:3325
ISSN:0146-9592
Container-title:Optics Letters
language:en
Short-container-title:Opt. Lett.

Author:

Li Tao,Long Linyun,Hu Zelin,Wan Rongqiao,Gong Xiaoliang,Zhang Lei,Yuan Yongbo,Yan Jianchang,Zhu Wenhui,Wang Liancheng,Li Jinmin

Funder

National Key Research and Development Program of China

Innovation‐Driven Project of Central South University

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference20 articles.

1. Effect of asymmetric Schottky barrier on GaN-based metal-semiconductor-metal ultraviolet detector

2. Characterization of AlN metal-semiconductor-metal diodes in the spectral range of 44–360nm: Photoemission assessments

3. Fabrication of non-polar GaN based highly responsive and fast UV photodetector

4. Ohmic and rectifying contacts on bulk AlN for radiation detector applications

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3. Tunable Bandgap of Lu_xIn_1-xO Ternary Alloy for Solar-Blind Ultraviolet Detection;IEEE Electron Device Letters;2024-02

4. Boosting the photodetection of bulk aluminum nitride crystals-based MSM device through an additional electrode;APL Materials;2023-10-01

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