Electroluminescence of GeSn/Ge MQW LEDs on Si substrate-Reference-Cited by-同舟云学术

Electroluminescence of GeSn/Ge MQW LEDs on Si substrate

Published:2015-07-01 Issue:13 Volume:40 Page:3209
ISSN:0146-9592
Container-title:Optics Letters
language:en
Short-container-title:Opt. Lett.

Author:

Schwartz Bernhard,Oehme Michael,Kostecki Konrad,Widmann Daniel,Gollhofer Martin,Koerner Roman,Bechler Stefan,Fischer Inga A.,Wendav Torsten,Kasper Erich,Schulze Jörg,Kittler Martin

Funder

Deutsche Forschungsgemeinschaft (DFG)

Stiftung der Deutschen Wirtschaft (sdw)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference14 articles.

1. Bandgap engineering of group IV materials for complementary n and p tunneling field effect transistors

2. Band anticrossing in highly mismatchedSnxGe1−xsemiconducting alloys

3. Lasing in direct-bandgap GeSn alloy grown on Si

4. Germanium tin light emitters on silicon

5. Electroluminescence of germanium LEDs on silicon: Influence of antimony doping

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