Electroluminescence of germanium LEDs on silicon: Influence of antimony doping-Reference-Cited by-同舟云学术

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Electroluminescence of germanium LEDs on silicon: Influence of antimony doping

Published:2014-10-10 Issue:11-12 Volume:11 Page:1686-1691
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Schwartz Bernhard,Klossek André,Kittler Martin,Oehme Michael,Kasper Erich,Schulze Jörg

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Ge_0.92Sn_0.08/Ge multi-quantum-well LEDs operated at 2-μm-wavelength on a 12-inch Si substrate;Photonics Research;2023-09-12

3. Enhanced light emission of germanium light-emitting-diode on 150 mm germanium-on-insulator (GOI);Optics Express;2023-05-11

4. Formation and Optical Properties of Locally Strained Ge Microstructures Embedded into Cavities;Semiconductors;2021-06

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