Electroluminescence from metal-insulator-semiconductor tunneling diodes using compressively strained Ge on Si_05Ge_05 virtual substrates
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference34 articles.
1. High-mobility Si and Ge structures
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3. Strained-Si nMOSFET formed on very thin SiGe buffer layer fabricated by ion implantation technique
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1. Progress in group-IV semiconductor nanowires based photonic devices;Applied Physics A;2023-02-25
2. Superior optical (λ ∼ 1550 nm) emission and detection characteristics of Ge microdisks grown on virtual Si0.5Ge0.5/Si substrates using molecular beam epitaxy;Nanotechnology;2019-12-23
3. Electrical-Driven Plasmon Source of Silicon Based on Quantum Tunneling;ACS Photonics;2018-11-02
4. One-dimensional Si/Ge nanowires and their heterostructures for multifunctional applications—a review;Nanotechnology;2017-01-25
5. Room temperature direct band gap emission characteristics of surfactant mediated grown compressively strained Ge films;Nanotechnology;2016-09-23
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