Oblique electron-beam evaporation of distinctive indium-tin-oxide nanorods for enhanced light extraction from InGaN/GaN light emitting diodes
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference20 articles.
1. AlGaN/GaN quantum well ultraviolet light emitting diodes
2. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
3. Highly efficient vertical laser-liftoff GaN-based light-emitting diodes formed by optimization of the cathode structure
4. Improvement of InGaN-GaN light-emitting diode performance with a nano-roughened p-GaN surface
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