GaN/AlN quantum-disk nanorod 280 nm deep ultraviolet light emitting diodes by molecular beam epitaxy-Reference-Cited by-同舟云学术

GaN/AlN quantum-disk nanorod 280 nm deep ultraviolet light emitting diodes by molecular beam epitaxy

Published:2019-12-19 Issue:1 Volume:45 Page:121
ISSN:0146-9592
Container-title:Optics Letters
language:en
Short-container-title:Opt. Lett.

Author:

Wei Tongbo^ORCID,Islam S. M.,Jahn Uwe,Yan Jianchang,Lee Kevin,Bharadwaj Shyam^ORCID,Ji Xiaoli^ORCID,Wang Junxi,Li Jinmin,Protasenko Vladimir,Xing Huili (Grace),Jena Debdeep

Funder

National Key R&D Program of China

National Science Foundation

Division of Materials Research

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference19 articles.

1. Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency

2. Enhanced vertical and lateral hole transport in high aluminum-containing AlGaN for deep ultraviolet light emitters

3. Controlled Coalescence of AlGaN Nanowire Arrays: An Architecture for Nearly Dislocation-Free Planar Ultraviolet Photonic Device Applications

4. High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

5. 270 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60 mW Continuous Wave Output Power

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