Enhanced vertical and lateral hole transport in high aluminum-containing AlGaN for deep ultraviolet light emitters
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4809947
Reference20 articles.
1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
2. Demonstration of an ultraviolet 336 nm AlGaN multiple-quantum-well laser diode
3. Continuous-wave operation of ultraviolet InGaN/InAlGaN multiple-quantum-well laser diodes
4. Activation of acceptors in Mg‐doped GaN grown by metalorganic chemical vapor deposition
5. Mg acceptor level in AlN probed by deep ultraviolet photoluminescence
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