Raman tensor of AlN bulk single crystal-Reference-Cited by-同舟云学术

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Raman tensor of AlN bulk single crystal

Published:2015-03-17 Issue:2 Volume:3 Page:38
ISSN:2327-9125
Container-title:Photonics Research
language:en
Short-container-title:Photon. Res.

Author:

Zheng Wei,Zheng Ruisheng,Huang Feng,Wu Honglei,Li Fadi

Funder

Major Research plan of the National Natural Science Foundation of China

State Key Program of National Natural Science of China

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

2. 100 mW deep-ultraviolet emission from aluminium-nitride-based quantum wells pumped by an electron beam

3. Characterization of AlN metal-semiconductor-metal diodes in the spectral range of 44–360nm: Photoemission assessments

4. On the conflicting roles of ionizing radiation in ceramics

5. Self-heating study of an AlGaN∕GaN-based heterostructure field-effect transistor using ultraviolet micro-Raman scattering

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1. Growth of Spontaneous Nucleation AlN Crystals by Al-Base Alloy Evaporation in Nitrogen Atmosphere;Crystals;2024-03-30

2. Polarity Control of High Crystalline Quality Aln Thin Films Grown on Si(111) Substrates by Molecular Beam Epitaxy;2024

3. Comparative studies of nanoscale columnar AlxGa1-xN/AlN heterostructures grown by plasma-assisted molecular-beam epitaxy on cSi, porSi/cSi and SiC/porSi/cSi substrates;Optical Materials;2023-11

4. State-of-the-art and prospective progress of growing AlN substrates by physical vapor transport;Journal of Crystal Growth;2023-09

5. Structural, Surface and Optical Studies of m- and c-Face AlN Crystals Grown by Physical Vapor Transport Method;Materials;2023-02-25

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