Affiliation:
1. Institute of Microelectronics of the Chinese Academy of Sciences
2. University of Chinese Academy of Sciences
Abstract
High-index dielectric nanostructures are of particular interest for nanoscale lasing due to their low absorption losses. However, the relatively weak near-field restricts the isolated dielectric cavities as low-threshold integrated on-chip laser sources. Here, we demonstrate lasing action in a silicon nanowire pair with 32 nm gap coated with dye-doped shell on the silicon-on-insulator platform. It is found that the quality factor Q is dominated by the coupling of the silicon nanowire pair, which depends on the gap size, the nanowire width, and the dye thickness. A lasing peak at the wavelength of 529 nm with FWHM of 0.6 nm is experimentally realized by the Si nanowire pair width, and the corresponding pumping power threshold is ∼34 µW/cm2. The proposed strategy, based on the well-established Si planar process, lays the groundwork for practical integrated nanolasers that have potential applications in photonic circuits.
Funder
National Natural Science Foundation of China
National Key Research and Development Program of China
Subject
Atomic and Molecular Physics, and Optics
Cited by
1 articles.
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