Performance enhancement of yellow InGaN-based multiple-quantum-well light-emitting diodes grown on Si substrates by optimizing the InGaN/GaN superlattice interlayer-Reference-Cited by-同舟云学术

Performance enhancement of yellow InGaN-based multiple-quantum-well light-emitting diodes grown on Si substrates by optimizing the InGaN/GaN superlattice interlayer

Published:2018-04-12 Issue:5 Volume:8 Page:1221
ISSN:2159-3930
Container-title:Optical Materials Express
language:en
Short-container-title:Opt. Mater. Express

Author:

Tao Xixia,Liu Junlin,Zhang Jianli,Mo Chunlan,Xu Longquan,Ding Jie,Wang Guangxu,Wang Xiaolan,Wu Xiaoming,Quan Zhijue,Pan Shuan,Fang Fang,Jiang Fengyi

Funder

National Natural Science Foundation of China (NSFC)

National Plan for Science, Technology and Innovation (NPST)

Publisher

The Optical Society

Subject

Electronic, Optical and Magnetic Materials

Reference41 articles.

1. White light emitting diodes with super-high luminous efficacy

2. Structural and optical emission characteristics of InGaN thin layers and the implications for growing high-quality quantum wells by MOCVD

3. InGaN: An overview of the growth kinetics, physical properties and emission mechanisms

4. Phase separation in InGaN multiple quantum wells annealed at high nitrogen pressures

5. Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication of High Efficiency Green InGaN/GaN MicroLEDs by Modulating Potential Barrier Height of the Sidewall MQWs in V-Pits;IEEE Photonics Journal;2024-06

2. Advancing high-performance visible light communication with long-wavelength InGaN-based micro-LEDs;Scientific Reports;2024-03-25

3. Study of Sr,Ba3Si6O3N8:Eu phosphor for Improving Color Quality of White Light-Emitting Diodes;Lecture Notes in Electrical Engineering;2024

4. Effect of varying threading dislocation densities on the optical properties of InGaN/GaN quantum wells with intentionally created V-shaped pits;Journal of Vacuum Science & Technology B;2023-11-16

5. Growth modification via indium surfactant for InGaN/GaN green LED;Semiconductor Science and Technology;2023-02-17