Raman and X-ray absorption near-edge structure characterization of GaN implanted with O, Ar, Xe, Te and Au-Reference-Cited by-同舟云学术

Raman and X-ray absorption near-edge structure characterization of GaN implanted with O, Ar, Xe, Te and Au

Published:2007-08 Issue:12 Volume:29 Page:1856-1860
ISSN:0925-3467
Container-title:Optical Materials
language:en
Short-container-title:Optical Materials

Author:

Katsikini M.,Arvanitidis J.,Paloura E.C.,Ves S.,Wendler E.,Wesch W.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Spectroscopy

Reference33 articles.

1. GaN: Processing, defects, and devices

2. Ion irradiation-induced disordering of semiconductors: defect structures and applications

3. Ion Implantation;Ryssel,1986

4. Ion implantation into GaN

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