Optical characteristics of a-Si:H layers deposited by PACVD at various temperatures

Author:

Jaglarz Janusz,Jurzecka-Szymacha Maria,Tkacz-Śmiech Katarzyna,Sahraoui Bouchta

Funder

AGH-UST

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Spectroscopy

Reference50 articles.

1. Application of amorphous silicon field effect transistors in addressable liquid crystal display panels;Snell;Appl. Phys. A,1981

2. The a-Si:H growth mechanism and the role of H abstraction from the surface by SiH3 radicals via an Eley–Rideal mechanism;Kessels;J. Non-Cryst. Solids,2004

3. Chemical vapour deposition promoted by r.f. discharge;Sterling;Solid State Electron.,1965

4. Thin-Film Silicon Solar Cells;Zeman,2010

5. F. Gaspari, Optoelectronic properties of amorphous silicon the role of hydrogen: from experiment to modeling, optoelectronics – materials and techniques, in: P. Predeep (Ed.), ISBN: 978-953-307-276-0, InTech, , 2011.

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