Simulations of light extraction and light propagation properties of light emitting diodes featuring silicon carbide substrates

Author:

Lee Yang-Chun,Lu Tai-Yen,Lai Yuh-Hui,Chen Hsuen-Li,Ma Dai-Liang,Lee Cheng-Chung,Cheng Shao-Chia

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Spectroscopy

Reference19 articles.

1. High-power and high-efficiency InGaN-based light emitters;Laubsch;IEEE Trans. Electron Dev.,2010

2. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: a review;Casady;Solid-State Electron.,1996

3. The persistent photoconductivity effect in AlGaN/GaN heterostructures grown on sapphire and SiC substrates;Arslan;J. Appl. Phys.,2008

4. R.F. Guan, D.L. Tian, X. Wang, W.Q. Zhau, Thermal, mechanical and optical analysis of SiC-based LED, in: IEEE 2008 10th Electronics Packaging Technology Conference, 2008, pp. 978-1-4244-21.

5. Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface;Huh;J. Appl. Phys.,2003

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