Carrier loss mechanisms in type II quantum wells for the active region of GaSb-based mid-infrared interband cascade lasers-Reference-Cited by-同舟云学术

Carrier loss mechanisms in type II quantum wells for the active region of GaSb-based mid-infrared interband cascade lasers

Published:2011-09 Issue:11 Volume:33 Page:1817-1819
ISSN:0925-3467
Container-title:Optical Materials
language:en
Short-container-title:Optical Materials

Author:

Sęk G.,Janiak F.,Motyka M.,Ryczko K.,Misiewicz J.,Bauer A.,Höfling S.,Forchel A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Spectroscopy

Reference18 articles.

1. Infrared laser based on intersubband transitions in quantum wells

2. Type‐II quantum‐well lasers for the mid‐wavelength infrared

3. Room temperature operated 3.1μm type-I GaSb-based diode lasers with 80mW continuous-wave output power

4. Laser Diodes for Gas Sensing Emitting at 3.06 $\mu$m at Room Temperature

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1. Carrier transfer between confined and localized states in type II InAs/GaAsSb quantum wells;Optical and Quantum Electronics;2017-01-16

2. Room Temperature Carrier Kinetics in the W-type GaInAsSb/InAs/AlSb Quantum Well Structure Emitting in Mid-Infrared Spectral Range;Acta Physica Polonica A;2016-11

3. Photoluminescence quenching mechanisms in type II InAs/GaInSb QWs on InAs substrates;Optical and Quantum Electronics;2016-07-28

4. Interface Intermixing in Type II InAs/GaInAsSb Quantum Wells Designed for Active Regions of Mid-Infrared-Emitting Interband Cascade Lasers;Nanoscale Research Letters;2015-12

5. Effect of arsenic on the optical properties of GaSb-based type II quantum wells with quaternary GaInAsSb layers;Journal of Applied Physics;2013-12-14