Room temperature operated 3.1μm type-I GaSb-based diode lasers with 80mW continuous-wave output power
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2919720
Reference10 articles.
1. High temperature operation of λ≈3.3μm quantum cascade lasers
2. Design of high-power room-temperature continuous-wave GaSb-based type-I quantum-well lasers with > 2.5 µm
3. Carrier capture in InGaAsSb∕InAs∕InGaSb type-II laser heterostructures
4. Mid-infrared interband cascade lasers at thermoelectric cooler temperatures
5. High-temperature interband cascade lasers emitting at λ=3.6–4.3μm
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