Effect of post-deposition annealing temperature on RF-sputtered HfO2 thin film for advanced CMOS technology
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference25 articles.
1. Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions
2. Energy gap and band alignment for (HfO2)x(Al2O3)1−x on (100) Si
3. Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks
4. Interfacial and Electrical Characterization in Metal–Oxide–Semiconductor Field-Effect Transistors with CeO2Gate Dielectric
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