First-principles study of structural and electronic properties of zincblende AlxIn1−xN
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference25 articles.
1. Band parameters for nitrogen-containing semiconductors
2. Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes
3. Band-structure-corrected local density approximation study of semiconductor quantum dots and wires
4. Ab initio study of structural parameters and gap bowing in zinc-blende AlxGa1−xN and AlxIn1−xN alloys
5. High electron mobility in nearly lattice-matched AlInN∕AlN∕GaN heterostructure field effect transistors
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3. Tight Binding and Density Functional Theory of Tailoring Electronic Properties in Al1−xInxN/AlN/GaN High Electron Mobility Transistors (HEMTs);Topics in Applied Physics;2022
4. Enhancement of photovoltaic efficiency in CdSe x Te1−x (where 0 ⩽ x ⩽ 1): insights from density functional theory;Journal of Physics: Condensed Matter;2019-12-19
5. Structural and electronic properties of wurtzite, zincblende and rocksalt Al1 − xInxN ternary alloys at ambient and high pressure;Phase Transitions;2018-10-04
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