Materials science communication effects of rca clean-up procedures on the formation of roughened poly-si electrodes for high-density drams' capacitors-Reference-Cited by-同舟云学术

Materials science communication effects of rca clean-up procedures on the formation of roughened poly-si electrodes for high-density drams' capacitors

Published:1997-11 Issue:2 Volume:51 Page:195-198
ISSN:0254-0584
Container-title:Materials Chemistry and Physics
language:en
Short-container-title:Materials Chemistry and Physics

Author:

Liu Han-Wen,Lai Wen-Koi,Yu Swei-Yang,Huang Stewart C.,Cheng Huang-Chung

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science

Reference8 articles.

1. The honeycomb-shape capacitor structure for ULSI DRAM;Yu;IEEE Electron Dev. Lett.,1993

2. Device application and structure observation for hemispherical-grained Si;Watanabe;J. Appl. Phys.,1992

3. Rougged surface poly-Si electrode and low temperature deposited Si3N4 for 64 Mbit and beyond STC DRAM cell;Yoshimaru;IEDM Tech. Dig,1990

4. Fabrication of storage capacitance-enhanced capacitors with a rough electrode;Hayahide;Jpn. Appl. Phys. Lett.,1990

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