Ge ion implantation in Si for the fabrication of Si/GexSi1-x heterojunction transistors
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference20 articles.
1. Proc. ESSDERC '93;Ashburn,1993
2. Pseudomorphic growth of GexSi1−xon silicon by molecular beam epitaxy
3. Si/Ge0.3Si0.7/Si heterojunction bipolar transistor made with Si molecular beam epitaxy
4. Cooperative growth phenomena in silicon/germanium low‐temperature epitaxy
5. Low‐temperature chemical vapor deposition of epitaxial Si and SiGe layers at atmospheric pressure
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