The phase identification of the H2SO4-etched GaAs by X-ray diffraction
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference28 articles.
1. Device physics and technology of III–V compounds
2. Single- and double-layer insulator metal-oxide-semiconductor capacitors on indium arsenide
3. Interface properties of InAs-MIS structures and their application to FET
4. Inversion layer transport and properties of oxides on InAs
5. C-V Characteristics of GaP MOS diode with anodic oxide film
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1. Influence of the oxidation of GaAs on the work of light-emitting spintronic diodes with InGaAs/GaAs quantum wells;Nanosystems: Physics, Chemistry, Mathematics;2015-12-21
2. Micro Structuration of GaAs Surface by Wet Etching: Towards a Specific Surface Behavior;Journal of Nanoscience and Nanotechnology;2012-08-01
3. Chemical polishing method of GaAs specimens for transmission electron microscopy;Micron;2010-01
4. The etching behavior of n-GaP in aqua regia solutions;Journal of Applied Electrochemistry;2005-01
5. Characterization of wet-etched GaAs (100) surfaces;Surface and Interface Analysis;2005
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