C-V Characteristics of GaP MOS diode with anodic oxide film-Reference-Cited by-同舟云学术

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C-V Characteristics of GaP MOS diode with anodic oxide film

Published:1976-05 Issue:5 Volume:23 Page:521-523
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Ikoma T.,Yokomizo H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31750/01478455.pdf?arnumber=1478455

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the properties of GaP supersaturated with Ti;Journal of Alloys and Compounds;2020-04

2. GaP-based MIS Capacitors Using a SiN Gate Dielectric;MRS Proceedings;2003

3. The phase identification of the H2SO4-etched GaAs by X-ray diffraction;Materials Chemistry and Physics;1999-10

4. Studies of thin films grown on InAs(111) and GaP(100) in HCl etches using X-ray diffraction methods;Materials Chemistry and Physics;1996-06

5. Effects of annealing on anodic oxides of GaP;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1991-05

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