The etching behavior of n-GaP in aqua regia solutions-Reference-Cited by-同舟云学术

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The etching behavior of n-GaP in aqua regia solutions

Published:2005-01 Issue:1 Volume:35 Page:77-84
ISSN:0021-891X
Container-title:Journal of Applied Electrochemistry
language:en
Short-container-title:J Appl Electrochem

Author:

Chang K. L.,Lee C. K.,Hsu J. W.,Hsieh H. F.,Shih H. C.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrochemistry,General Chemical Engineering

Link

http://link.springer.com/content/pdf/10.1007/s10800-004-2565-4.pdf

Reference23 articles.

1. Device physics and technology of III–V compounds

2. N.E. Schumaker, M. Kuhn and R.A. Furnage, IEEE Trans. Electron Devices ED-18 (1972) 627.

3. Selective Etching of GaP Crystals with Hot Phosphoric Acid

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