Growth of pseudomorphic Si1−yCy and Si1−x−yGexCy alloy layers on < 100 > Si by ion implantation and pulsed excimer laser induced epitaxy-Reference-Cited by-同舟云学术

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Growth of pseudomorphic Si1−yCy and Si1−x−yGexCy alloy layers on < 100 > Si by ion implantation and pulsed excimer laser induced epitaxy

Published:1998-07 Issue:1-3 Volume:54 Page:153-159
ISSN:0254-0584
Container-title:Materials Chemistry and Physics
language:en
Short-container-title:Materials Chemistry and Physics

Author:

Fogarassy Eric,Grob Adriana,Grob Jean-Jacques,Muller Dominique,Prévot Bernard,de Unamuno Salomé,Boher Pierre,Stehle Marc

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science

Reference30 articles.

1. Heterojunction bipolar transistors using Si-Ge alloys

2. Structure, properties and applications of GexSi1-xstrained layers and superlattices

3. Optical band gap of the ternary semiconductor Si1−x−yGexCy

4. Growth and strain compensation effects in the ternary Si1−x−yGexCyalloy system

5. Growth and properties of strained Si1-x-yGexCylayers

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation of compressively strained Si/Si1−xCx/Si(100) heterostructures using gas-source molecular beam epitaxy;Journal of Crystal Growth;2013-01

2. Characterization of Si1−−Ge C films grown by C+ implantation and subsequent pulsed laser annealing;Materials Chemistry and Physics;1999-07

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